This paper reviews recent research on III–V nitrides, including their physical and chemical properties, synthesis methods, and applications in optoelectronic devices. III–V nitrides, including boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN), have been attracting attention due to their excellent properties. The article outlined the fundamental properties of these materials, which provide a solid foundation for applying the materials in high-performance devices. Preparation techniques for III–V nitrides are of paramount importance. The article compared and thoroughly analyzed the advantages and shortcomings of each manufacturing method. In addition, the article demonstrated the application of these materials in optoelectronic devices and discussed strategies to improve device performance. Finally, the article discussed the prospects and future trends of III–V nitrides, including exploring new materials, innovations in preparation techniques, expanding device applications, and overcoming current challenges. This review not only summarizes the recent research progress in III–V nitrides but also highlights their potential applications in the field of high-performance optoelectronic devices and the innovative nature of future research directions.
