A MoS₂/CuO-based hybrid p–n junction for high-performance self-powered photodetection

Energy consumption is one of the key challenges that needs to be circumvented to develop high-performance and efficient photodetectors (PDs). In this regard, p-n heterojunctions based on van der Waals materials have attracted widespread research interest for the fabrication of next-generation PDs. Here, we report the integration of two-dimensional n-type MoS₂ with p-type CuO to realize a p-n heterojunction. It is interesting to note that the device exhibits self-powered and broadband photodetection with a maximum responsivity and detectivity of 45.67 mA W⁻¹ and 9.71 × 10¹¹ Jones, respectively, under an illumination of 12.5 μW cm⁻² light intensity. Moreover, the photoresponse of the device shows three orders of enhancement in the photocurrent at a reverse bias of −1.0 V. The device shows a responsivity and detectivity of 10.03 A W⁻¹ and 1.8 × 10¹⁴ Jones at −1.0 V under the illumination of 12.5 μW cm⁻² light intensity. This enhanced photoresponse is the result of better charge separation under the influence of built-in electric voltage and rectifying diode characteristics produced by the MoS₂/CuO heterostructure device.