Issue 45, 2024

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Abstract

The demands for precision machining of silicon-based materials are growing in various modern applications, including micro-electro-mechanical systems (MEMS), micromotors, sensors, bioelectronics, medical implants, and microfluidic devices. Towards the miniaturization and high-precision trends, it is essential to explore recent advancements in plasma etching of silicon-based materials. This review aims to provide a comprehensive review of the latest advancements in plasma etching for micro and nanofabrication of silicon-based materials, including silicon, silicon dioxide, silicon carbide, silicon nitride, and silicon germanium. The review begins by addressing etching mechanisms, simulation methods, and recent novel approaches and enhancements in plasma etching. Subsequently, separate sections are dedicated to discussing commonly utilized chemistries, process routes, and processing parameters specific to each type of silicon-based material during plasma etching. Subsequently, functional structures such as micropillar arrays, high-aspect-ratio holes and nanowires formed through plasma etching alongside their applications across various fields are summarized. In the end, current research trends and future prospects in plasma etching for micro and nanofabrication of silicon-based materials are discussed. This review article seeks to address both the academic and industrial audience thereby leading to further innovations for plasma etching of silicon-based materials.

Graphical abstract: Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Article information

Article type
Review Article
Submitted
17 fev 2024
Accepted
22 okt 2024
First published
30 okt 2024

J. Mater. Chem. C, 2024,12, 18211-18237

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

C. Li, Y. Yang, R. Qu, X. Cao, G. Liu, X. Jin, Y. Liu, S. Liu, W. Jiang and X. Zhang, J. Mater. Chem. C, 2024, 12, 18211 DOI: 10.1039/D4TC00612G

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