Issue 8, 2016

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

Abstract

We report the heteroepitaxial growth of variable composition n-GaAs1−xPx directly on GaAs substrates via close-spaced vapor transport using mixed GaAs–GaP powder sources. GaAs1−xPx films showed an average 10% reduction in atomic concentration of phosphorous from the source material, and ten GaAs0.7P0.3 films were grown with reproducible composition from a single source pellet. Non-aqueous photoelectrochemical measurements were used to assess electronic quality, with the best short-circuit photocurrent of 6.7 mA cm−2 and open-circuit photovoltage of 0.915 V for n-GaAs0.7P0.3 with a carrier concentration of 2 × 1017 cm−3. The best Hall electron mobility for this composition was 1570 cm2 V−1 s−1. Cross-sectional transmission electron microscopy of GaAs0.7P0.3 shows single-crystal structure with few defects. We conclude that CSVT is a promising route to the growth of ternary III–V materials like GaAs1−xPx for low-cost high-efficiency tandem photoelectrochemical or photovoltaic devices.

Graphical abstract: Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

Supplementary files

Article information

Article type
Paper
Submitted
31 avq 2015
Accepted
30 okt 2015
First published
30 okt 2015

J. Mater. Chem. A, 2016,4, 2909-2918

Author version available

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

A. L. Greenaway, A. L. Davis, J. W. Boucher, A. J. Ritenour, S. Aloni and S. W. Boettcher, J. Mater. Chem. A, 2016, 4, 2909 DOI: 10.1039/C5TA06900A

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