Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD

Tagbo Emmanuel Ezenwa; Paul D. McNaughter; James Raftery; David J. Lewis; Paul O'Brien

doi:10.1039/C8DT03443E

Full compositional control of PbS_xSe_1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD†

Tagbo Emmanuel Ezenwa,^a Paul D. McNaughter,

*^a James Raftery,^a David J. Lewis

^a and Paul O'Brien

*^ab

Author affiliations

* Corresponding authors

^a School of Chemistry, The University of Manchester, Oxford Road, Manchester, UK
E-mail: paul.mcnaughter@manchester.ac.uk, paul.obrien@manchester.ac.uk

^b School of Materials, The University of Manchester, Oxford Road, Manchester, UK

Abstract

Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbS_xSe_1−x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbS_xSe_1−x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N′-2-naphthoylthioureato]lead(II) was solved and displayed the expected decreases in Pb–E bond lengths from the previously reported selenium variant.

This article is part of the themed collection: In memory of Paul O’Brien

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Article information

DOI: https://doi.org/10.1039/C8DT03443E
Article type: Paper
Submitted: 23 avq 2018
Accepted: 26 sen 2018
First published: 16 noy 2018
This article is Open Access

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Dalton Trans., 2018,47, 16938-16943

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Full compositional control of PbS_xSe_1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD

T. E. Ezenwa, P. D. McNaughter, J. Raftery, D. J. Lewis and P. O'Brien, Dalton Trans., 2018, 47, 16938 DOI: 10.1039/C8DT03443E

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Dalton Transactions