Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Abstract

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm² active area and the front electrode was screen-printed.