Issue 40, 2015

Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering

Abstract

We herein report the significantly improved thermoelectric performance of n-type Bi2Te2.7Se0.3 polycrystalline bulks through band structure engineering achieved by Au-doping. The Seebeck coefficient can be increased for both Bi2Te2.7Se0.3 and Cu-intercalated Bi2Te2.7Se0.3 bulks by doping Au on the Bi site, either due to the addition of the resonant state or the enhancement of density of states (DOS) effective mass md*. Theoretical calculations combined with experimental measurements showed that band engineering connected with chemical potential tuning results in higher DOS at the bottom of the conduction band and increases the md* from ∼0.88m0 (Bi2Te2.7Se0.3) to ∼1.06m0 (Cu0.008Bi1.99Au0.01Te2.7Se0.3). As a consequence, a peak thermoelectric figure of merit ZT ∼0.91 was obtained at 320 K for Cu0.008Bi1.99Au0.01Te2.7Se0.3, which is ∼40% and ∼25% enhancement in comparison with Bi2Te2.7Se0.3 and Cu0.008Bi2Te2.7Se0.3, respectively.

Graphical abstract: Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering

Article information

Article type
Paper
Submitted
15 iyn 2015
Accepted
19 avq 2015
First published
03 sen 2015

J. Mater. Chem. C, 2015,3, 10604-10609

Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering

K. H. Lee, S. I. Kim, H. Mun, B. Ryu, S. Choi, H. J. Park, S. Hwang and S. W. Kim, J. Mater. Chem. C, 2015, 3, 10604 DOI: 10.1039/C5TC01731A

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