High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Abstract

Herein, two kinds of vertical organic optoelectronic devices, vertical organic field-effect transistors (VOFETs) and light-emitting transistors (VOLETs), were constructed based on amorphous organic semiconductors of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as hole injecting and transport layers and tris(8-hydroxy-quinolinato) aluminum (Alq₃) as the emitting layer. High device performances with a large on/off ratio of ∼6 × 10³, current density of ∼40 mA cm⁻², and fast response of ∼5 ms at a frequency of 20 Hz and a brightness of 126 cd m⁻² were demonstrated for these two vertical devices with good device stability and repeatability. These results suggest the potential applications of amorphous organic semiconductors with good film-forming characteristics and easy device fabrication ability in vertical optoelectronic circuits.