Correction: High-k double gate junctionless tunnel FET with a tunable bandgap
Abstract
Correction for ‘High-k double gate junctionless tunnel FET with a tunable bandgap’ by Shiromani Balmukund Rahi et al., RSC Adv., 2015, 5, 54544–54550.
Maintenance work is planned from 09:00 BST to 12:00 BST on Saturday 28th September 2024.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur-208016, India
E-mail:
sbrahi@iitk.ac.in
b
Microelectronics Research Center, University of Texas at Austin, Austin-78758, USA
E-mail:
bghosh@utexas.edu
Correction for ‘High-k double gate junctionless tunnel FET with a tunable bandgap’ by Shiromani Balmukund Rahi et al., RSC Adv., 2015, 5, 54544–54550.
S. B. Rahi and B. Ghosh, RSC Adv., 2015, 5, 59665 DOI: 10.1039/C5RA90067K
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content