Issue 32, 2015
From the journal:

Journal of Materials Chemistry C

Correction: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol

M. Bezuidenhout,ab   T. Kennedy,b   S. Belochapkine,b   Y. Guo,b   E. Mullane,b   P. A. Kielya  and  K. M. Ryan*b  

* Corresponding authors

a Department of Life Sciences, and Materials and Surface Science Institute, University of Limerick, Limerick, Ireland

b Materials and Surface Science Institute and Department of Chemical and Environmental Sciences, University of Limerick, Limerick, Ireland
E-mail: Kevin.m.ryan@ul.ie

Abstract

Correction for ‘High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol’ by M. Bezuidenhout et al., J. Mater. Chem. C, 2015, 3, 7455–7462.

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Article information

DOI
https://doi.org/10.1039/C5TC90134K
Article type
Correction
Submitted
14 Jul 2015
Accepted
14 Jul 2015
First published
24 Jul 2015
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2015,3, 8434-8434

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Correction: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol

M. Bezuidenhout, T. Kennedy, S. Belochapkine, Y. Guo, E. Mullane, P. A. Kiely and K. M. Ryan, J. Mater. Chem. C, 2015, 3, 8434 DOI: 10.1039/C5TC90134K

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