Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

Jian Deng; Yuanxiang Xu; Liqun Liu; Cunfang Feng; Jia Tang; Yu Gao; Yan Wang; Bing Yang; Ping Lu; Wensheng Yang; Yuguang Ma

doi:10.1039/C6CC90043G

Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm² V⁻¹ s⁻¹

Jian Deng,^a Yuanxiang Xu,^a Liqun Liu,^a Cunfang Feng,^a Jia Tang,^a Yu Gao,^a Yan Wang,*^a Bing Yang,^a Ping Lu,^a Wensheng Yang^a and Yuguang Ma*^ab

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* Corresponding authors

^a State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, P. R. China

^b State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, P. R. China
E-mail: wangy2011@jlu.edu.cn

Abstract

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm² V⁻¹ s⁻¹’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

Chemical Communications

Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm² V⁻¹ s⁻¹

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Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm² V⁻¹ s⁻¹

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