A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

Marc Courté; Sandeep G. Surya; Ramesh Thamankar; Chao Shen; V. Ramgopal Rao; Subodh G. Mhailsalkar; Denis Fichou

doi:10.1039/C6RA26876E

A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy†

Marc Courté,‡^a Sandeep G. Surya,‡^b Ramesh Thamankar,^c Chao Shen,

^a V. Ramgopal Rao,^b Subodh G. Mhailsalkar^de and Denis Fichou

*^afg

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* Corresponding authors

^a School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
E-mail: denisfichou@ntu.edu.sg

^b Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India

^c School of Engineering and Technology, CMR University, Bangalore 560043, India

^d School of Material Science and Engineering, Nanyang Technological University, Singapore

^e Energy Research Institute@NTU (ERI@N), Nanyang Technological University, Singapore

^f CNRS, UMR 8232, Institut Parisien de Chimie Moléculaire, Paris, France

^g Sorbonne Universités, UPMC Univ Paris 06, UMR 8232, Institut Parisien de Chimie Moléculaire, Paris, France

Abstract

The charge transport properties of 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph₄), a large planar quinoïd π-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with a hole mobility up to 2 × 10⁻² cm² V⁻¹ s⁻¹ and on/off ratio of 10⁴. The transfer characteristics I_d/V_g present a clear hysteresis typical of a resistive memory effect. This memory effect is again observed by means of c-AFM in lateral mode using a nearby gold top-contact as the counter-electrode. The c-AFM current response recorded for variable distances d = 0.5–9.0 μm between the AFM tip and the top electrode shows a resistive switching behavior in the low-voltage 0.0–3.0 V region. Repeated “write-read-erase-read” cycles performed at low frequency reveal a non-volatile memory effect in the form of high-resistance and low-resistance states with a stable on/off ratio of 10² during cycling operation.

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DOI: https://doi.org/10.1039/C6RA26876E
Article type: Paper
Submitted: 16 Nov 2016
Accepted: 14 Dec 2016
First published: 15 Dec 2016
This article is Open Access

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RSC Adv., 2017,7, 3336-3342

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A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

M. Courté, S. G. Surya, R. Thamankar, C. Shen, V. R. Rao, S. G. Mhailsalkar and D. Fichou, RSC Adv., 2017, 7, 3336 DOI: 10.1039/C6RA26876E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy†

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A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

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