Issue 43, 2017

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Abstract

Correction for ‘Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite’ by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.

Associated articles

Article information

Article type
Correction
Submitted
18 Oct 2017
Accepted
18 Oct 2017
First published
27 Oct 2017
This article is Open Access
Creative Commons BY license

Nanoscale, 2017,9, 17144-17144

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

J. Seo, J. Choi, H. Kim, J. Kim, J. Yang, C. Cuhadar, J. S. Han, S. Kim, D. Lee, H. W. Jang and N. Park, Nanoscale, 2017, 9, 17144 DOI: 10.1039/C7NR90229H

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements