Issue 26, 2018
From the journal:

Journal of Materials Chemistry A

Correction: Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen

Mohamed Ebaid,a   Jung-Wook Min,a   Chao Zhao,a   Tien Khee Ng,a   Hicham Idriss*b  and  Boon S. Ooi*a  

* Corresponding authors

a Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
E-mail: boon.ooi@kaust.edu.sa

b SABIC-Corporate Research and Development Center (CRD) at KAUST, Thuwal 23955, Saudi Arabia
E-mail: IdrissH@sabic.com

Abstract

Correction for ‘Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen’ by Mohamed Ebaid et al., J. Mater. Chem. A, 2018, 6, 6922–6930.

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Article information

DOI
https://doi.org/10.1039/C8TA90136H
Article type
Correction
Submitted
07 Jun 2018
Accepted
07 Jun 2018
First published
20 Jun 2018
This article is Open Access
Creative Commons BY license

J. Mater. Chem. A, 2018,6, 12794-12794

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Correction: Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen

M. Ebaid, J. Min, C. Zhao, T. K. Ng, H. Idriss and B. S. Ooi, J. Mater. Chem. A, 2018, 6, 12794 DOI: 10.1039/C8TA90136H

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