Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Qiang Wang; Gang Niu; Sourav Roy; Yankun Wang; Yijun Zhang; Heping Wu; Shijie Zhai; Wei Bai; Peng Shi; Sannian Song; Zhitang Song; Ya-Hong Xie; Zuo-Guang Ye; Christian Wenger; Xiangjian Meng; Wei Ren

doi:10.1039/C9TC04880D

Interface-engineered reliable HfO₂-based RRAM for synaptic simulation†

Qiang Wang,

‡^a Gang Niu,‡^a Sourav Roy,^a Yankun Wang,^a Yijun Zhang,^a Heping Wu,^a Shijie Zhai,^a Wei Bai,^a Peng Shi,^a Sannian Song,^b Zhitang Song,^b Ya-Hong Xie,^c Zuo-Guang Ye,

^d Christian Wenger,^e Xiangjian Meng^f and Wei Ren*^a

Author affiliations

* Corresponding authors

^a Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
E-mail: gangniu@xjtu.edu.cn, wren@mail.xjtu.edu.cn

^b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

^c Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA

^d Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, Canada

^e IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

^f National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

Abstract

Future synaptic simulation using resistance random access memory (RRAM) requires higher reliability and lower power consumption of the devices and understanding of the correlation of the materials with their multi-level resistance switching (RS) properties. Using O₃ pretreatment on a TiN electrode, this work highlights the significant role of the interface in the enhancement of the reliability and the power consumption of HfO₂-based RRAM devices. X-ray photoelectron spectroscopy investigations indicate increases of the TiON and TiO₂ components with the augmentation of the number of O₃ treatment cycles, which strongly impacts the RS properties of the Pt/HfO₂/TiN devices. Optimal RS properties were obtained for 20 O₃ pulse-pretreated devices, which were used to emulate biological synapses after an annealing process. Analog memory properties, including analog set and reset in DC mode and potentiation/depression based on two types of designed pulses, have been achieved. Finally, one of the biological synapse learning rules, spike-timing-dependent plasticity, was successfully emulated. These results, avoiding the conventional route based on dual-layer insulators, are of significance for synaptic simulation using interface-engineered single-layer HfO₂ RRAM and further reveal the internal mechanism of HfO₂-based electron synapses.

Journal of Materials Chemistry C

Interface-engineered reliable HfO₂-based RRAM for synaptic simulation†

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Journal of Materials Chemistry C