Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

Ji Xu; Yaling Qin; Yongjiao Shi; Yutong Shi; Yang Yang; Xiaobing Zhang

doi:10.1039/D0NA00921K

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Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

Ji Xu,

*^a Yaling Qin,^b Yongjiao Shi,^a Yutong Shi,^a Yang Yang^c and Xiaobing Zhang^a

Author affiliations

* Corresponding authors

^a Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
E-mail: xu@seu.edu.cn

^b Division of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China

^c Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China

Abstract

Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the “simplified formula” accordingly (eqn (2)–(5)). On the other hand, the main part of our work focuses on the simulation results of structural parameters and circuit behavior, which is not involved with eqn (2)–(5). Thus, the reported results and conclusions remain reliable.

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DOI: https://doi.org/10.1039/D0NA00921K
Article type: Comment
Submitted: 04 Nov 2020
Accepted: 14 Jan 2021
First published: 08 Feb 2021
This article is Open Access

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Nanoscale Adv., 2021,3, 1151-1152

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Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

J. Xu, Y. Qin, Y. Shi, Y. Shi, Y. Yang and X. Zhang, Nanoscale Adv., 2021, 3, 1151 DOI: 10.1039/D0NA00921K

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Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

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