Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

Fengyou Yang; Shengyao Chen; Huimin Feng; Cong Wang; Xiaofeng Wang; Shu Wang; Zhican Zhou; Bo Li; Lijun Ma; Haiguang Yang; Yong Xie; Qian Liu

doi:10.1039/D0TC90064H

Correction: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst

Fengyou Yang,^ab Shengyao Chen,^ac Huimin Feng,^ab Cong Wang,^d Xiaofeng Wang,^ab Shu Wang,^ab Zhican Zhou,^ac Bo Li,^ab Lijun Ma,^a Haiguang Yang,^ab Yong Xie^e and Qian Liu*^abc

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* Corresponding authors

^a CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
E-mail: liuq@nanoctr.cn

^b University of Chinese Academy of Sciences, Beijing 100049, P. R. China

^c MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China

^d Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

^e Department of Physics, Beihang University, Beijing 100083, China

Abstract

Correction for ‘High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst’ by Fengyou Yang et al., J. Mater. Chem. C, 2020, 8, 2664–2668.

Journal of Materials Chemistry C

Correction: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst

Abstract

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Correction: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst

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