Issue 48, 2021
From the journal:

Journal of Materials Chemistry C

Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations

Xiao Tang,*a   Kuang-Hui Li,a   Che-Hao Liao,a   Dongxing Zheng,b   Chen Liu,b   Rongyu Lin,a   Na Xiao,a   Shibin Krishna,a   Jose Tauboadaa  and  Xiaohang Li*a  

* Corresponding authors

a Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
E-mail: xiao.tang@kaust.edu.sa, Xiaohang.li@kaust.edu.sa

b Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Abstract

Correction for ‘Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations’ by Xiao Tang et al., J. Mater. Chem. C, 2021, 9, 15868–15876, DOI: 10.1039/D1TC02852A.

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Article information

DOI
https://doi.org/10.1039/D1TC90261J
Article type
Correction
Submitted
26 Nov 2021
Accepted
26 Nov 2021
First published
02 Dec 2021
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2021,9, 17542-17542

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Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations

X. Tang, K. Li, C. Liao, D. Zheng, C. Liu, R. Lin, N. Xiao, S. Krishna, J. Tauboada and X. Li, J. Mater. Chem. C, 2021, 9, 17542 DOI: 10.1039/D1TC90261J

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