Issue 19, 2022

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility

Abstract

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.

Associated articles

Article information

Article type
Correction
Submitted
03 May 2022
Accepted
03 May 2022
First published
09 May 2022
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2022,10, 7731-7731

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility

C. Ma, Z. Wu, Z. Jiang, Y. Chen, W. Ruan, H. Zhang, H. Zhu, G. Zhang, J. Kang, T. Zhang, J. Chu and Z. Fang, J. Mater. Chem. C, 2022, 10, 7731 DOI: 10.1039/D2TC90092K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements