Issue 32, 2022
From the journal:

Journal of Materials Chemistry C

Correction: Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing

Yewon Kim,a   Kwonyoung Kim,a   Okhyeon Kim,a   Chang Yup Park,b   Dong Geon Koo,b   Dong-Ho Ahn,b   Bong Jin Kuhb  and  Won-Jun Lee*a  

* Corresponding authors

a Departments of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
E-mail: wjlee@sejong.ac.kr

b Process Development, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

Abstract

Correction for ‘Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing’ by Yewon Kim et al., J. Mater. Chem. C, 2022, 10, 9691–9698, DOI: https://doi.org/10.1039/D2TC00784C.

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Article information

DOI
https://doi.org/10.1039/D2TC90156K
Article type
Correction
Submitted
01 Aug 2022
Accepted
01 Aug 2022
First published
08 Aug 2022
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2022,10, 11811-11811

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Correction: Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing

Y. Kim, K. Kim, O. Kim, C. Y. Park, D. G. Koo, D. Ahn, B. J. Kuh and W. Lee, J. Mater. Chem. C, 2022, 10, 11811 DOI: 10.1039/D2TC90156K

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