Correction: Atomically flat semiconductor nanoplatelets for light-emitting applications
* Corresponding authors
a Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
b
Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
E-mail:
yangxy@shu.edu.cn
c School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
d Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun 130012, China
e Institute of Chemistry, and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
f Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
g School of Chemistry and Chemical Engineering, Linyi University, Linyi 276005, P. R. China
h Research School of Chemistry, The Australian National University, ACT 2601, Australia
i Faculty of Engineering, The University of Nottingham, Additive Manufacturing Building, Jubilee Campus, University Park, Nottingham NG7 2RD, UK
j Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstr. 10, Munich 80539, Germany
k
School of Molecular and Life Sciences, Curtin University, Perth, WA 6102, Australia
E-mail:
guohua.jia@curtin.edu.au
Abstract
Correction for ‘Atomically flat semiconductor nanoplatelets for light-emitting applications’ by Bing Bai et al., Chem. Soc. Rev., 2023, 52, 318–360, https://doi.org/10.1039/D2CS00130F.