Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
Florian
Pantle, 
*a
Fabian
Becker,
a
Max
Kraut,
a
Simon
Wörle,
a
Theresa
Hoffmann,
a
Sabrina
Artmeier
a
and
Martin
Stutzmann
*a
*a
Fabian
Becker,
a
Max
Kraut,
a
Simon
Wörle,
a
Theresa
Hoffmann,
a
Sabrina
Artmeier
a
and
Martin
Stutzmann
*a
Abstract
Correction for ‘Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates’ by Florian Pantle et al., Nanoscale Adv., 2021, 3, 3835–3845, https://doi.org/10.1039/D1NA00221J.
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