Issue 11, 2023
From the journal:

Journal of Materials Chemistry C

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Shu An†,a   HyunJung Park†a  and  Munho Kim*a  

* Corresponding authors

a School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore
E-mail: munho.kim@ntu.edu.sg

Abstract

Correction for ‘Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials’ by Shu An et al., J. Mater. Chem. C, 2023, 11, 2430–2448, https://doi.org/10.1039/d2tc05041b.

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Article information

DOI
https://doi.org/10.1039/D3TC90046K
Article type
Correction
Submitted
17 Feb 2023
Accepted
17 Feb 2023
First published
02 Mar 2023
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2023,11, 3889-3889

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Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

S. An†, H. Park† and M. Kim, J. Mater. Chem. C, 2023, 11, 3889 DOI: 10.1039/D3TC90046K

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