Issue 14, 2024
From the journal:

Nanoscale Advances

Correction: Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Moh'd Rezeq,*ab   Yawar Abbas,ab   Boyu Wen,c   Zbig Wasilewskic  and  Dayan Ban*c  

* Corresponding authors

a Department of Physics, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates
E-mail: mohd.rezeq@ku.ac.ae

b System on Chip Centre, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates

c Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, ON, Canada
E-mail: dban@uwaterloo.ca

Abstract

Correction for ‘Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot’ by Moh'd Rezeq et al., Nanoscale Adv., 2023, 5, 5562–5569, https://doi.org/10.1039/D3NA00638G.

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Article information

DOI
https://doi.org/10.1039/D4NA90068E
Article type
Correction
Submitted
10 Jun 2024
Accepted
10 Jun 2024
First published
17 Jun 2024
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2024,6, 3680-3680

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Correction: Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

M. Rezeq, Y. Abbas, B. Wen, Z. Wasilewski and D. Ban, Nanoscale Adv., 2024, 6, 3680 DOI: 10.1039/D4NA90068E

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