From the journal:

Journal of Materials Chemistry C

Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Chae-Eun Oh,a   Young-Ha Kwon,b   Nak-Jin Seong,b   Kyu-Jeong Choib  and  Sung-Min Yoon*a  

* Corresponding authors

a Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea
E-mail: sungmin@khu.ac.kr

b NCD Co., Ltd, Daejeon 34015, Korea

Abstract

Correction for ‘Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm’ by Chae-Eun Oh et al., J. Mater. Chem. C, 2024, 12, 14455–14468, https://doi.org/10.1039/D4TC02779E.

About
Cited by
Related
Download options Please wait...

Associated articles

Article information

DOI
https://doi.org/10.1039/D4TC90191F
Article type
Correction
Submitted
08 Nov 2024
Accepted
08 Nov 2024
First published
19 Nov 2024
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2024, Advance Article

Permissions

Request permissions

Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

C. Oh, Y. Kwon, N. Seong, K. Choi and S. Yoon, J. Mater. Chem. C, 2024, Advance Article , DOI: 10.1039/D4TC90191F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements