Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles
Abstract
Correction for ‘Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles’ by Le Fang et al., Phys. Chem. Chem. Phys., 2023, 25, 20969–20978, https://doi.org/10.1039/D3CP01951A.