Issue 10, 2025

Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles

Abstract

Correction for ‘Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles’ by Le Fang et al., Phys. Chem. Chem. Phys., 2023, 25, 20969–20978, https://doi.org/10.1039/D3CP01951A.

Associated articles

Article information

Article type
Correction
Submitted
02 Jan 2025
Accepted
02 Jan 2025
First published
12 Feb 2025
This article is Open Access
Creative Commons BY license

Phys. Chem. Chem. Phys., 2025,27, 5403-5403

Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles

Le Fang, C. Chen, X. Lu and W. Ren, Phys. Chem. Chem. Phys., 2025, 27, 5403 DOI: 10.1039/D5CP90009C

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