Issue 12, 2025
From the journal:

Nanoscale

Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers

Fei Yang,*a   Bo Hu,a   Zijian He,a   Bingkun Liu,a   Shilong Lou,a   Duogui Lia  and  Wentao Wanga  

* Corresponding authors

a School of Integrated Circuits, Anhui University, Hefei 230601, China
E-mail: feiyang-0551@163.com

Abstract

Correction for ‘Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers’ by Fei Yang et al., Nanoscale, 2024, 16, 6729–6738, https://doi.org/10.1039/D3NR05935A.

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Article information

DOI
https://doi.org/10.1039/D5NR90044A
Article type
Correction
Submitted
03 Mar 2025
Accepted
03 Mar 2025
First published
12 Mar 2025
This article is Open Access
Creative Commons BY license

Nanoscale, 2025,17, 7511-7511

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Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers

F. Yang, B. Hu, Z. He, B. Liu, S. Lou, D. Li and W. Wang, Nanoscale, 2025, 17, 7511 DOI: 10.1039/D5NR90044A

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