GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls
Abstract
Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and
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Article information
- Article type
- Communication
- Submitted
- 12 May 2005
- Accepted
- 09 Jun 2005
- First published
- 11 Jul 2005
Chem. Commun., 2005, 3995-3997
Permissions
GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls
U. K. Gautam, S. R. C. Vivekchand, A. Govindaraj and C. N. R. Rao, Chem. Commun., 2005, 3995 DOI: 10.1039/B506676J
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