Fabrication of TaS2 nanobelt arrays and their enhanced field-emission†
Abstract
Crystal TaS2 nanobelt arrays were fabricated on Ta wafers by a two-step method. Field-emission measurements show that the nanobelt arrays are decent field emitters with a turn-on field of ∼0.7 V μm−1, a threshold field of ∼2.1 V μm−1, and a field enhancement factor of ∼4.33 × 104.