Issue 7, 2010
From the journal:

Nanoscale

Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films

S. Chandramohan,ad   A. Kanjilal,b   S. N. Sarangi,a   S. Majumder,a   R. Sathyamoorthy,c   C.-H. Hongd  and  T. Som*a  

* Corresponding authors

a Institute of Physics, Sachivalaya Marg, Bhubaneswar, India
E-mail: tsom@iopb.res.in
Fax: +91-674-2300142
Tel: +91-674-2301058

b Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Dresden, Germany

c Department of Physics, Kongunadu Arts & Science College, Coimbatore, India

d School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju, South Korea

Abstract

We demonstrate doping of nanocrystalline CdS thin films with Co ions by ion implantation at an elevated temperature of 573 K. The modifications caused in structural and optical properties of these films are investigated. Co-doping does not lead to amorphization or formation of any secondary phase precipitate for dopant concentrations in the range of 0.34–10.8 at.% used in the present study. However, we observe a systematic reduction in the d-spacing with increasing cobalt concentration. Optical band gap of CdS does not show any obvious change upon Co-doping. In addition, implantation gives rise to grain growth and increase in the surface roughness. The results are discussed in the light of ion-matter interaction in the keV regime.

Graphical abstract: Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films

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Article information

DOI
https://doi.org/10.1039/C0NR00123F
Article type
Paper
Submitted
15 Feb 2010
Accepted
09 Mar 2010
First published
25 May 2010

Nanoscale, 2010,2, 1155-1159

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Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films

S. Chandramohan, A. Kanjilal, S. N. Sarangi, S. Majumder, R. Sathyamoorthy, C.-H. Hong and T. Som, Nanoscale, 2010, 2, 1155 DOI: 10.1039/C0NR00123F

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