Issue 18, 2011

Contact area lithography and pattern transfer of self-assembled organic monolayers on SiO2/Si substrates

Abstract

We describe a procedure for one-step patterning and transfer of self-assembled organic monolayers (SAMs) on SiO2/Si substrates. This procedure was inspired from an idea of pattern formation at contact area, which realizes high patterning fidelity, and enables a universal approach for the micro/nanometre scale patterning of SAMs.

Graphical abstract: Contact area lithography and pattern transfer of self-assembled organic monolayers on SiO2/Si substrates

Article information

Article type
Communication
Submitted
15 Jan 2011
Accepted
07 Mar 2011
First published
21 Mar 2011

Chem. Commun., 2011,47, 5145-5147

Contact area lithography and pattern transfer of self-assembled organic monolayers on SiO2/Si substrates

C. Bae, H. Kim and H. Shin, Chem. Commun., 2011, 47, 5145 DOI: 10.1039/C1CC10283D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements