Issue 30, 2011
From the journal:

Chemical Communications

Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface†

Hiroaki Maeda,a   Ryota Sakamoto,a   Yoshihiko Nishimori,a   Junya Sendo,a   Fumiyuki Toshimitsu,a   Yoshinori Yamanoia  and  Hiroshi Nishihara*a  

* Corresponding authors

a Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
E-mail: nisihara@chem.s.u-tokyo.ac.jp
Fax: +81-3-5841-8063

Abstract

Linear and branched Fe(tpy)2 complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.

Graphical abstract: Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

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Article information

DOI
https://doi.org/10.1039/C1CC12832A
Article type
Communication
Submitted
14 May 2011
Accepted
20 Jun 2011
First published
01 Jul 2011

Chem. Commun., 2011,47, 8644-8646

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Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

H. Maeda, R. Sakamoto, Y. Nishimori, J. Sendo, F. Toshimitsu, Y. Yamanoi and H. Nishihara, Chem. Commun., 2011, 47, 8644 DOI: 10.1039/C1CC12832A

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