Facile solution deposition of ZnIn2S4nanosheet films on FTO substrates for photoelectric application†
Abstract
In this paper, ZnIn2S4 perpendicular
* Corresponding authors
a School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore
b Mechanical Engineering, National University of Singapore, Singapore
c NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore
d
King Saud University, KSA. P.O. Box 2455, Riyadh, Saudi Arabia
E-mail:
seeram@nus.edu.sg
Fax: +65 6872 5563
Tel: +65 6516 6593
In this paper, ZnIn2S4 perpendicular
S. Peng, P. Zhu, V. Thavasi, S. G. Mhaisalkar and S. Ramakrishna, Nanoscale, 2011, 3, 2602 DOI: 10.1039/C0NR00955E
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content