Issue 6, 2011
From the journal:

Nanoscale

Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy†

Seung Jae Baik,a   Koeng Su Lim,a   Wonsup Choi,b   Hyunjun Yoo,b   Jang-Sik Leeb  and  Hyunjung Shin*b  

* Corresponding authors

a Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon, Korea

b Center for Materials and Processes of Self-Assembly and School of Advanced Materials Engineering, Kookmin University, Jeongneung-Gil 77, Seoul, Korea
E-mail: hjshin@kookmin.ac.kr
Fax: +82-2-910-5243
Tel: +82-2-910-5022

Abstract

Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρm) and the lateral spreading distance (Δs), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

Graphical abstract: Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

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Article information

DOI
https://doi.org/10.1039/C1NR10104H
Article type
Paper
Submitted
30 Jan 2011
Accepted
20 Mar 2011
First published
09 May 2011

Nanoscale, 2011,3, 2560-2565

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Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

S. J. Baik, K. S. Lim, W. Choi, H. Yoo, J. Lee and H. Shin, Nanoscale, 2011, 3, 2560 DOI: 10.1039/C1NR10104H

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