STM-induced surface aggregates on metals and oxidized silicon

Abstract

We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements of the same area have been obtained.