Issue 9, 2011
From the journal:

Nanoscale

Site-selected doping in silicon nanowires by an external electric field

Fang Wu,a   Erjun Kan*b  and  Xiaojun Wu*c  

* Corresponding authors

a School of Science, Nanjing Forestry University, Nanjing, Jiangsu, P. R. China

b Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu, P. R. China
E-mail: erjunkan@mail.ustc.edu.cn

c Department of materials science and engineering, Hefei national lab for the physical science at the microscal, CAS Key Laboratory of Energy Conversion Materials, University of Science and Technology of China, Hefei, Anhui, P. R. China
E-mail: xjwu@ustc.edu.cn

Abstract

The properties of dopant-related defects in silicon nanowires are key characteristics in semiconductive devices. Our first-principles calculations predicted that the preferred doping sites of B and P atoms in hydrogen-passivated silicon nanowires have opposite distribution behavior under electric field, suggesting a steady intrinsic p-n junction can be spontaneously formed in (B and P) codoped silicon nanowires.

Graphical abstract: Site-selected doping in silicon nanowires by an external electric field

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Article information

DOI
https://doi.org/10.1039/C1NR10569H
Article type
Communication
Submitted
03 Jun 2011
Accepted
19 Jul 2011
First published
15 Aug 2011

Nanoscale, 2011,3, 3620-3622

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Site-selected doping in silicon nanowires by an external electric field

F. Wu, E. Kan and X. Wu, Nanoscale, 2011, 3, 3620 DOI: 10.1039/C1NR10569H

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