Issue 3, 2012
From the journal:

Chemical Communications

Supramolecular block copolymers: graphene oxide composites for memory device applications†

An-Dih Yu,a   Cheng-Liang Liu*b  and  Wen-Chang Chen*a  

* Corresponding authors

a Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
E-mail: chenwc@ntu.edu.tw
Fax: +886-2-2362-3040
Tel: +886-2-2362-8398

b Department of Organic Device Engineering and Research Center for Organic Electronics, Yamagata University, Yonezawa, Yamagata 992-8510, Japan
E-mail: clliu@yz.yamagata-u.ac.jp
Fax: +81-238-26-3309
Tel: +81-238-26-3309

Abstract

Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers (BCP) and graphene oxide (GO) as charge storage materials are reported for write-once-read-many-times (WORM) memory devices.

Graphical abstract: Supramolecular block copolymers: graphene oxide composites for memory device applications

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Article information

DOI
https://doi.org/10.1039/C1CC15945C
Article type
Communication
Submitted
24 Sep 2011
Accepted
31 Oct 2011
First published
14 Nov 2011

Chem. Commun., 2012,48, 383-385

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Supramolecular block copolymers: graphene oxide composites for memory device applications

A. Yu, C. Liu and W. Chen, Chem. Commun., 2012, 48, 383 DOI: 10.1039/C1CC15945C

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