Issue 49, 2012
From the journal:

Chemical Communications

Solution processed high performance pentacene thin-film transistors†

Ting-Han Chao,ab   Ming-Jen Chang,c   Motonori Watanabe,b   Ming-Hui Luo,c   Yuan Jay Chang,b   Tzu-Chien Fang,c   Kew-Yu Chen*c  and  Tahsin J. Chow*b  

* Corresponding authors

a Department of Chemistry, National Taiwan Normal University, Ting-Chow Road, Taipei, Taiwan

b Institute of Chemistry, Academia Sinica, No.128, Academia Road Sec 2, Taipei, Taiwan
E-mail: tjchow@chem.sinica.edu.tw
Fax: +886-2-27884179
Tel: +886-2-27898552

c Department of Chemical Engineering, Feng Chia University, Taichung, Taiwan
E-mail: kyuchen@fcu.edu.tw
Fax: +886-4-24510890
Tel: +886-4-24517250

Abstract

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm2 V–1 s–1 with an on/off ratio of 106.

Graphical abstract: Solution processed high performance pentacene thin-film transistors

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Article information

DOI
https://doi.org/10.1039/C2CC31754K
Article type
Communication
Submitted
09 Mar 2012
Accepted
24 Apr 2012
First published
24 Apr 2012

Chem. Commun., 2012,48, 6148-6150

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Solution processed high performance pentacene thin-film transistors

T. Chao, M. Chang, M. Watanabe, M. Luo, Y. J. Chang, T. Fang, K. Chen and T. J. Chow, Chem. Commun., 2012, 48, 6148 DOI: 10.1039/C2CC31754K

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