A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors†
Abstract
A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm2 V−1 s−1 and an on/off ratio of 2 × 106 despite its small π-conjugated system. Good FET stability in ambient conditions has also been observed.