A poly(fluorene-thiophene) donor with a tethered phenanthro[9,10-d]imidazole acceptor for flexible nonvolatile flash resistive memory devices

Abstract

A conjugated poly(fluorene-thiophene) donor and a tethered phenanthro[9,10-d]imidazole acceptor (PFT-PI) was used as the active layer in flexible nonvolatile resistor memory devices with low threshold voltages (±2 V), low switching powers (∼100 μW cm⁻²), large ON/OFF memory windows (10⁴), good retention (>10⁴ s) and excellent endurance against electric and mechanical stimulus.