Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

Abstract

In this work, we show the ability to tune the volatility of redox-based memory by designing barriers to ion drift. By changing the nature and properties of the barrier material, the key performance metric (ratio of retention time to read/write time) could be altered to yield ratios in the range of 1 to 10⁹.