Issue 100, 2012
From the journal:

Chemical Communications

Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering†

Kamaljit Singh,*a   Tarunpreet Singh Virk,a   Jing Zhang,b   Wei Xub  and  Daoben Zhu*b  

* Corresponding authors

a Organic Synthesis Laboratory, Department of Applied Chemical Sciences and Technology, Guru Nanak Dev University, Amritsar 143005, India
E-mail: kamaljit19in@yahoo.co.in
Fax: +91 2258819/20

b Beijing National Laboratory for Molecular Science, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China
E-mail: wxu@iccas.ac.cn

Abstract

New, neutral, slightly puckered aromatic meso-substituted tetrathia[22]annulene[2.1.2.1] macrocyclic architectures display p-type semiconductor behaviour and constitute molecular field-effect transistors with high on/off ratios (8.67 × 106) and high mobility (0.23 cm2 V−1 s−1) in thin films deposited on octadecyltrichlorosilane (OTS) modified SiO2.

Graphical abstract: Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

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Article information

DOI
https://doi.org/10.1039/C2CC37004B
Article type
Communication
Submitted
27 Sep 2012
Accepted
01 Nov 2012
First published
01 Nov 2012

Chem. Commun., 2012,48, 12174-12176

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Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

K. Singh, T. Singh Virk, J. Zhang, W. Xu and D. Zhu, Chem. Commun., 2012, 48, 12174 DOI: 10.1039/C2CC37004B

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