Issue 43, 2012

Facile fabrication of tin-doped hematite photoelectrodes – effect of doping on magnetic properties and performance for light-induced water splitting

Abstract

We present a new, easily scalable method for the deposition of nanocrystalline hematite photoelectrodes based on the spin-coating of a mixed solution containing tin(II) and iron(III) chlorides followed by thermal treatment. Our facile approach does not require any additional film-forming organic species and allows simple control of the photoelectrochemical performance of the electrode by adjusting the degree of tin doping. When annealed at 650 °C a strong increase in the water oxidation photocurrent is observed with increasing tin concentration. The maximum performance (0.45 mA cm−2 at 1.43 V vs. RHE) was found at the highest possible tin loading (20 : 100, Sn : Fe). The contrasting performance of electrodes annealed at 650 °C and 800 °C suggests different activation processes for dopant diffusion and activation. The doping of tin into the crystal structure of hematite thin films is directly evidenced by X-ray photoelectron spectroscopy and indirectly by changes in the intrinsic magnetic parameters (Morin temperature, Néel temperature) of the hematite films. The magnetization measurements thus represent a potential technique to quantify doping amounts in hematite.

Graphical abstract: Facile fabrication of tin-doped hematite photoelectrodes – effect of doping on magnetic properties and performance for light-induced water splitting

Supplementary files

Article information

Article type
Paper
Submitted
15 Jul 2012
Accepted
24 Sep 2012
First published
05 Oct 2012

J. Mater. Chem., 2012,22, 23232-23239

Facile fabrication of tin-doped hematite photoelectrodes – effect of doping on magnetic properties and performance for light-induced water splitting

J. Frydrych, L. Machala, J. Tucek, K. Siskova, J. Filip, J. Pechousek, K. Safarova, M. Vondracek, J. H. Seo, O. Schneeweiss, M. Grätzel, K. Sivula and R. Zboril, J. Mater. Chem., 2012, 22, 23232 DOI: 10.1039/C2JM34639G

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