High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

Haibo Dong; Xiaoxian Zhang; Duan Zhao; Zhiqiang Niu; Qingsheng Zeng; Jinzhu Li; Le Cai; Yanchun Wang; Weiya Zhou; Min Gao; Sishen Xie

doi:10.1039/C2NR30133D

High performance bipolar resistive switching memory devices based on Zn₂SnO₄nanowires

Haibo Dong,†^ac Xiaoxian Zhang,†^b Duan Zhao,^ac Zhiqiang Niu,^ac Qingsheng Zeng,^b Jinzhu Li,^ac Le Cai,^ac Yanchun Wang,^a Weiya Zhou,*^a Min Gao^bd and Sishen Xie*^ab

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* Corresponding authors

^a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
E-mail: wyzhou@aphy.iphy.ac.cn, ssxie@aphy.iphy.ac.cn

^b Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

^c Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

^d Liquid Crystal Institute, Kent State University, Kent, OH 44242, USA

Abstract

The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn₂SnO₄ nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.

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High performance bipolar resistive switching memory devices based on Zn₂SnO₄nanowires

Abstract

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High performance bipolar resistive switching memory devices based on Zn₂SnO₄ nanowires

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