Issue 16, 2012
From the journal:

Nanoscale

Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

Daniel Rüffer,a   Rupert Huber,b   Paul Berberich,b   Stephan Albert,b   Eleonora Russo-Averchi,a   Martin Heiss,a   Jordi Arbiol,c   Anna Fontcuberta i Morral*a  and  Dirk Grundlerbd  

* Corresponding authors

a Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
E-mail: anna.fontcuberta-morral@epfl.ch
Fax: +41 21 693 4755
Tel: +41 21 693 73 94

b Lehrstuhl für Physik funktionaler Schichtsysteme, Physik Department, Technische Universität München, James-Franck-Str. 1, 85747 Garching bei München, Germany

c Institució Catalana de Recerca i Estudis Avançats (ICREA), Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Spain

d STI, Faculté Sciences et Technique de l'Ingénieur, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Abstract

Defined magnetization states in magnetic nanotubes could be the basic building blocks for future memory elements. To date, it has been extremely challenging to measure the magnetic states at the single-nanotube level. We investigate the magnetization states of an individual Ni nanotube by measuring the anisotropic magnetoresistance effect at cryogenic temperature. Depending on the magnitude and direction of the magnetic field, we program the nanotube to be in a vortex- or onion-like state near remanence.

Graphical abstract: Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

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Article information

DOI
https://doi.org/10.1039/C2NR31086D
Article type
Paper
Submitted
08 Mar 2012
Accepted
31 May 2012
First published
06 Jun 2012

Nanoscale, 2012,4, 4989-4995

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Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

D. Rüffer, R. Huber, P. Berberich, S. Albert, E. Russo-Averchi, M. Heiss, J. Arbiol, A. Fontcuberta i Morral and D. Grundler, Nanoscale, 2012, 4, 4989 DOI: 10.1039/C2NR31086D

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