Issue 4, 2012
From the journal:

RSC Advances

Direct patterning of poly(3-hexylthiophene) and its application to organic field-effect transistor†

Yuta Saito,a   Yoshimasa Sakai,b   Tomoya Higashiharaa  and  Mitsuru Ueda*a  

* Corresponding authors

a Department of Organic and Polymeric Materials, Tokyo Institute of Technology, 2-12-1-H120 O-okayama, Meguro-ku, Tokyo, Japan
E-mail: ueda.m.ad@m.titech.ac.jp

b Mitsubishi Chemical Group, Science and Technology Research Center, Inc., 1000 Kamoshida-cho, Aoba-ku, Yokohama, Japan

Abstract

A direct photolithographic patterning method of regioregular poly(3-hexylthiophene) (rr-P3HT) as a semiconductive layer of organic field-effect transistors (OFETs) has been developed. The performance (0.092 cm2/Vs) of a bottom-contact type OFET using the patterned rr-P3HT as a semiconductive layer was almost the same as that (0.10 cm2/Vs) using the pristine rr-P3HT.

Graphical abstract: Direct patterning of poly(3-hexylthiophene) and its application to organic field-effect transistor

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Article information

DOI
https://doi.org/10.1039/C2RA00783E
Article type
Communication
Submitted
23 Sep 2011
Accepted
22 Nov 2011
First published
15 Dec 2011

RSC Adv., 2012,2, 1285-1288

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Direct patterning of poly(3-hexylthiophene) and its application to organic field-effect transistor

Y. Saito, Y. Sakai, T. Higashihara and M. Ueda, RSC Adv., 2012, 2, 1285 DOI: 10.1039/C2RA00783E

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