Issue 40, 2013
From the journal:

Chemical Communications

Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass†

Evgeny Tatarov,‡a   Thomas Reichert,‡a   Tobat P. I. Saragi,*a   Ayna Scheffler,a   Roman Ueberschaer,a   Clemens Bruhn,b   Thomas Fuhrmann-Liekera  and  Josef Salbecka  

* Corresponding authors

a Macromolecular Chemistry and Molecular Materials, Institute of Chemistry, Department of Mathematics and Science and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, D 34132 Kassel, Germany
E-mail: tobat.saragi@uni-kassel.de
Tel: +49 561 8044720

b Institute of Chemistry, Department of Mathematics and Science, University of Kassel, D 34132 Kassel, Germany

Abstract

The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while a magnetic-field induced resistance decrease (negative MR up to −6.5%) can be achieved under illumination.

Graphical abstract: Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

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Article information

DOI
https://doi.org/10.1039/C3CC40552D
Article type
Communication
Submitted
22 Jan 2013
Accepted
27 Mar 2013
First published
02 Apr 2013

Chem. Commun., 2013,49, 4564-4566

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Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

E. Tatarov, T. Reichert, T. P. I. Saragi, A. Scheffler, R. Ueberschaer, C. Bruhn, T. Fuhrmann-Lieker and J. Salbeck, Chem. Commun., 2013, 49, 4564 DOI: 10.1039/C3CC40552D

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