Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO4

Feng Feng; Shuanglin Hu; Yuqiao Guo; Jiyin Zhao; Ngai Yui Chan; Linfeng Fei; Wensheng Yan; Wei Ning; Jinlong Yang; Yu Wang; Yi Xie; Changzheng Wu

doi:10.1039/C3CC42880J

Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO₄†

Feng Feng,^a Shuanglin Hu,^b Yuqiao Guo,^a Jiyin Zhao,^a Ngai Yui Chan,^c Linfeng Fei,^c Wensheng Yan,^a Wei Ning,^d Jinlong Yang,^a Yu Wang,^c Yi Xie^a and Changzheng Wu*^a

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* Corresponding authors

^a Hefei National Laboratory for Physical Sciences at the Microscale & National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, P. R. China
E-mail: czwu@ustc.edu.cn
Fax: +86-551-63606266

^b Department of Chemistry, The Ångström Laboratory, Uppsala University, Box 538, SE-75121 Uppsala, Sweden

^c Department of Applied Physics and Material Research Center, The Hong Kong Polytechnic University, Hong Kong SAR, P. R. China

^d High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui Province, P. R. China

Abstract

The synthetic new-phase VTiO₄, as a new solid solution structure of anatase type, brings a large magnetodielectric ratio (Δε/ε₀) of 7.2% at 300 K, representing a new simple-oxide structural catalogue exhibiting a room-temperature large magnetic-dielectric effect.

Chemical Communications

Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO₄†

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Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO₄

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Chemical Communications