The interface effect on the band offset of semiconductor nanocrystals with type-I core–shell structure
Abstract
In order to pursue the interface effect on the band offset of the semiconductor
* Corresponding authors
a
Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Department of Physics, Hunan Normal University, Changsha 410081, Hunan, P. R. China
E-mail:
gangouy@hunnu.edu.cn
b State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics & Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
In order to pursue the interface effect on the band offset of the semiconductor
Z. Zhu, G. Ouyang and G. Yang, Phys. Chem. Chem. Phys., 2013, 15, 5472 DOI: 10.1039/C3CP43667E
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content