Issue 6, 2013
From the journal:

Nanoscale

Impurity induced non-bulk stacking in chemically exfoliated h-BN nanosheets†

Aleksey Shmeliov,a   Judy S. Kim,a   Konstantin B. Borisenko,ae   Peng Wang,b   Eiji Okunishi,c   Mervyn Shannon,d   Angus I. Kirkland,ae   Peter D. Nellista  and  Valeria Nicolosi*f  

* Corresponding authors

a University of Oxford, Department of Materials, Parks Road, Oxford, UK

b National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing 210093, People's Republic of China

c EM Application Group, EM Business UNIT, JEOL Ltd., 1-2 Musasino 3-chome, Akishima, Tokyo 196-8558, Japan

d SuperSTEM, STFC Daresbury Laboratories, Keckwick Lane, Warrington, UK

e Research Complex at Harwell, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0FA, UK

f School of Chemistry, School of Physics & CRANN, Trinity College Dublin, Dublin 2, Ireland
E-mail: nicolov@tcd.ie

Abstract

Structural characterization of 2D nanomaterials is an important step towards their future applications. In this work we carried out imaging and structural analysis of 2D h-BN produced by chemical-exfoliation, emphasizing the stacking order in few-layer sheets. Our analysis, for the first time has shown conclusively that non-bulk stacking can exist in 2D h-BN.

Graphical abstract: Impurity induced non-bulk stacking in chemically exfoliated h-BN nanosheets

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Article information

DOI
https://doi.org/10.1039/C3NR33375B
Article type
Communication
Submitted
29 Oct 2012
Accepted
02 Feb 2013
First published
05 Feb 2013

Nanoscale, 2013,5, 2290-2294

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Impurity induced non-bulk stacking in chemically exfoliated h-BN nanosheets

A. Shmeliov, J. S. Kim, K. B. Borisenko, P. Wang, E. Okunishi, M. Shannon, A. I. Kirkland, P. D. Nellist and V. Nicolosi, Nanoscale, 2013, 5, 2290 DOI: 10.1039/C3NR33375B

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